Elpida Memory

Японский производитель DRAM, образованный в 1999 году слиянием DRAM-подразделений NEC и Hitachi. Специализировался на мобильной памяти. В 2013 году поглощён Micron Technology и переименован в Micron Memory Japan.

Страна: ЯпонияОснована: 1999

Найдено 2 080 компонентов
Партномер
Категория
Описание
EBD25EC8AJFA
256mb unbuffered ddr sdram dimm
EBJ20RE4BAFA-DJ-E
Memory Cards
2gb registered ddr3 sdram dimm
EDE5104AJSE-8E-E
512m bits ddr2 sdram
EDS51321DBH-TS
RAM
512m bits mobile ramâ„
EDX5116ACSE-3B-E
512m bits xdrâ„
EBE42FE8ACFR
Memory Cards
4gb fully buffered dimm
EDD2516AMTA-5
256m bits ddr sdram
EBE11UD8AGWA
1gb unbuffered ddr2 sdram dimm
EBS25EC8APSA
RAM
256mb sdram s.o.dimm
EBR12EC8ABSA
128mb direct rambus dram so rimmâ„
EBE21UE8ACSA
2gb ddr2 sdram so dimm
EBE21UE8AEFB-6E-F
Memory Cards
2gb unbuffered ddr2 sdram dimm
EBD10RD4ADFA
1gb registered ddr sdram dimm (128m words x72 bits, 1 rank)
EDS2532EEBH-75TT-E
256m bits sdram wtr (wide temperature range)
EBS51RC4ACFC-7A
512mb registered sdram dimm
EDD1216ALTA
RAM
128 m bit synchronous dram with double data rate (4 bank, sstl_2)
EDD5116AFTA-5
RAM
512m bits ddr sdram
EDE5104GASA-5A-E
512m bits ddr ii sdram
EDJ1108BABG-8C-E
1g bits ddr3 sdram
EDS1232ECBH-9ATT
128m bits sdram 128m bits sdram
EBD52RC8AKFA
512mb registered ddr sdram dimm
HB54A5129F1-A75B
512mb registered ddr sdram dimm
PD45128841G5-A10T-9JF
128m bit synchronous dram 4 bank, lvttl wtr (wide temperature range)
PD45128163
128m bit synchronous dram 4 bank, lvttl
EDE5104GASA-4A-E
512m bits ddr ii sdram
EDE5132AABG-8E-F
512m bits ddr2 sdram
EDS1232CASE
128m bits sdram (4m words x 32 bits)
EDS2516APTA-60L-E
256m bits sdram
HM5257405BTD-A6
512m lvttl interface sdram 133 mhz/100 mhz 8 mword
EBS11RC4ACNA-7A
1 gb registered sdram dimm
EBS26UC6APS-7A
256mb sdram s.o.dimm
EBS52UC8APSA
512mb sdram s.o.dimm
EBR51UC8ABFD-8C
512mb direct rambusâ„
EBE11FD8AGFD
Memory Cards
1gb fully buffered dimm
EBE11UE6ACSA-8G-E
1gb ddr2 sdram so dimm
EBE10RD4AJFA-5C-E
1gb registered ddr2 sdram dimm
EBD25UC8AJFA-7B
256mb unbuffered ddr sdram dimm
EBE11UD8ABFV-BE-E
1gb unbuffered ddr2 sdram dimm hyper dimmâ„
PD45128163G5-A10I-9JF
128m bit synchronous dram 4 bank, lvttl wtr (wide temperature range)
HM5117805J-5
16 m edo dram (2 mword x 8 bit) 2 k refresh
EBS52EC8APFA-7A
512mb unbuffered sdram dimm
EBE21FD4AHFL
2gb fully buffered dimm
EBR12UC8ABKD
128mb 32 bit direct rambus dram rimmâ„
EBJ10EE8BAWA-8C-E
1gb unbuffered ddr3 sdram dimm
EDJ1116BABG-DJ-E
1g bits ddr3 sdram
EDE1104AASE
1g bits ddr2 sdram organized as 33,554,432 words x 8 banks.
MC-4R512FKK8K-840
512mb 32 bit direct rambus dram rimm module
EDE2516AASE-AE-E
256m bits ddr2 sdram for hyper dimm
EDD1204ALTA-1A
128 m bit synchronous dram with double data rate (4 bank, sstl_2)
EBE10UE8ACWB
1gb unbuffered ddr2 sdram dimm