Elpida Memory
Японский производитель DRAM, образованный в 1999 году слиянием DRAM-подразделений NEC и Hitachi. Специализировался на мобильной памяти. В 2013 году поглощён Micron Technology и переименован в Micron Memory Japan.
Найдено 2 143 компонентов
Партномер
Категория
Описание
EDJ1116BABG-8C-E
1g bits ddr3 sdram
EDX5116ACSE
512m bits xdrâ„
HM5259805B-75
512m lvttl interface sdram 133 mhz/100 mhz 8 mword
EDS1216HABH-10TT-E
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E1116AEBG-8E-E
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EBD26UC6AKSA-7A
256mb ddr sdram so dimm (32m words x 64 bits, 2 banks)
EBE11ED8AGWA-5C-E
1gb unbuffered ddr2 sdram dimm
EBE21AD4AGFA-5C-E
2gb registered ddr2 sdram dimm
EBE21EE8ACWA-8E-E
2gb unbuffered ddr2 sdram dimm
EBE41EF8ABFA-6E-E
4gb unbuffered ddr2 sdram dimm
EBE51RD8AJFA-4A-E
512mb registered ddr2 sdram dimm
EBR51EC8ABFD
512mb direct rambusâ„
EDE1108ACSE-1J-E
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EBD26UC6AASA-6B
256mb ddr sdram so dimm
EBE11UE6ACUA
RAM
1gb ddr2 sdram so dimm
EDD1216AATA-5B-E
128m bits ddr sdram (8m words x 16 bits, ddr400)
EDD5108ADTA-7A
512m bits ddr sdram
EDD5116AGTA-4
512m bits ddr sdram
EDS2732CABH
256m bits sdram (8m words x 32 bits)
EBD11UD8ABDA-7B
1gb ddr sdram so dimm
EBE10EE8ACWA-8E-E
1gb unbuffered ddr2 sdram dimm
EBJ21RE8BAFA
2gb registered ddr3 sdram dimm
EDD5108AGTA-4
512m bits ddr sdram
EDE2508AASE-6E-E
256m bits ddr2 sdram
EDE5108AESK
512m bits ddr2 sdram
PD45128163G5-A75LT-9JF
128m bit synchronous dram 4 bank, lvttl wtr (wide temperature range)
PD45128441G5-A80L-9JF
128m bit synchronous dram 4 bank, lvttl
EBD11ED8ADFB-7A
1gb unbuffered ddr sdram dimm (128m words x72 bits, 2 ranks)
EBD52EC8AKFA-5C
512mb unbuffered ddr sdram dimm (64m words x 72 bits, 2 ranks)
EBE51UD8ABFA-4A-E
512mb unbuffered ddr2 sdram dimm (64m words x 64 bits, 1 rank)
EBE52UD6AFSA-4A-E
512mb ddr2 sdram so dimm (64m words x 64 bits, 2 ranks)
EDD1216AATA-7A-E
128m bits ddr sdram (8m words x 16 bits)
EDS1216AHTA-75-E
128m bits sdram
EDS2532CABH-1A-E
256m bits sdram (8m words x 32 bits)
EBS25EC8APSA-7A
256mb sdram s.o.dimm
EDE5108AESK-6E-E
512m bits ddr2 sdram
HM5225165BLTT-75
256m lvttl interface sdram 133 mhz/100 mhz 4 mword
EDE5116AJBG
512m bits ddr2 sdram
EBD13UB6ALS
128mb ddr sdram s.o. dimm
EBE10RD4ABFA-5C-E
1gb registered ddr2 sdram dimm (128m words x 72 bits, 1 rank)
EBR12UC8ABKD-AD
128mb 32 bit direct rambus dram rimmâ„
EDJ1116BABG-DG-E
1g bits ddr3 sdram
EDS6416CHBH-75-E
64m bits sdram (4m words x 16 bits)
EBS25UC8APMA-80L
256mb sdram micro dimm
EDE1108AASE-6E-E
1g bits ddr2 sdram organized as 33,554,432 words x 8 banks.
EBE51FD8AGFN-6E-E
512mb fully buffered dimm
EDJ1108BABG-8A-E
1g bits ddr3 sdram
EDS2532CABJ-1A-E
256m bits sdram
HB52RF1289E2
1 gb registered sdram dimm 128 mword
PD45128841G5-A10LI-9JF
128m bit synchronous dram 4 bank, lvttl wtr (wide temperature range)