Одна из пионеров полупроводниковой отрасли, основана в 1957 году группой инженеров во главе с Робертом Нойсом и Гордоном Муром. Первой наладила коммерческое производство интегральных схем. Выпускала транзисторы, диоды и силовые компоненты. В 2016 году поглощена ON Semiconductor (ныне onsemi).

Страна: США (в составе onsemi)Основана: 1957

Найдено 47 664 компонентов
Партномер
Категория
Описание
FDV304P
Digital FET, P Channel
747630030
Dual master slave j k f f
MBR1060FCT
Rectifier Diodes
Schottky rectifier
S9014
Pre amplifier, low level & low noise
FDS9926A-NL
Electronic Components
N��Channel,20V,8A,RDS(ON),15m��@10V,22m��@4.5V,30m��@2.5V,12Vgs(��V),0.9Vth(V),SOP8
FDS4435A-NL
MOSFETs
P—ChannelChannel, 30V, 7A,RDS(ON),23mΩ@10V,29mΩ@4.5V,66mΩ@2.5V,20Vgs(±V); 1.37Vth(V);SOP8
4N35SDM
MOC3083-M
Optocouplers
6 pin dip zero cross optoisolators triac driver output (800 volts peak)
FDS9400A-NL
Diodes
DC 17+ , SOP8
NDS331N
N channel Logic Level Enhancement Mode Field Effect Transistor
FQP10N20C
200v n channel advance q fet c series
SMCJ120CA
TVS Diodes
Transient voltage suppressors
SS14_NL
Rectifier Diodes
002,PLASTIC,SMA PACKAGE,DIODE, DISCRETE<AZ
DF06S
Electronic Components
DIODE, BRIDGE RECT, 1 PH, 600V, 1A, SMD
GBPC2508
Bridge rectifiers (glass passivated)
SS16L
Schottky rectifiers
FDS3590-NL
MOSFETs
N��Channel,100V,9A,RDS(ON),32m��@10V,34m��@4.5V,20Vgs(��V),1.87Vth(V),SOP8
FDS6294-NL
Electronic Components
DC 10+ , SO8
FDS6689S-NL
Electronic Components
NMOSFET, ��VDS��30V, ��VGS����20V, ��Vth��1.7V, VGS=4.5V,5m?,VGS=10V,4m?, ��ID��18A, Trench, SOP8,PCB
FDS6894AZ-NL
Logic Gates
FDS6892A-NL
MOSFETs
MBR0520LT1G
Electronic Components
Schottky Rectifier, 20V, 0.5A, Sod 123, Repetitive Peak Reverse Voltage:20V, Average Forward Current:500Ma, Diode Con…
KSP2907ABU
BJTs
Pnp epitaxial silicon transistor
KST4403MTF
BJTs
Pnp epitaxial silicon transistor
FSGM0565RUDTU
Green mode fairchild power switch (fpsâ„
FDN304P
TRIACs
P channel 1.8v Specified Powertrench Mosfet
SS9013GBU
BJTs
Npn epitaxial silicon transistor
MMBT5551NL
BJTs
encapsulation:SOT 23 parameter:NPNtype VCBO180V 600mA 350mW Bipolar Transistor(BJT) NPN IC(Collector Maximum Current)…
SS320C
Diodes
Schottky rectifiers
SMBJ90CA
TVS Diodes
Transient voltage suppressors
FDN306P
P channel 1.8v Specified Powertrench Mosfet
BC32716
BJTs
Pnp epitaxial silicon transistor
6N137-00ME
Optocouplers
High speed 10 mbit/s logic gate optocouplers
SMCJ120CA-E3/57T
Transient voltage suppressors
SI4542DY
30v complementary powertrench mosfet
NE555D
Timers and Oscillators
FDS8842NZ-NL
MOSFETs
N—ChannelChannel,40V,18A,RDS(ON),4.5mΩ@10V,6.5mΩ@4.5V,20Vgs(±V);1.91Vth(V) encapsulation:SOP8
KSP2907A
BJTs
Pnp epitaxial silicon transistor
NDS332P_NL
SMBJ30CA-E3/52
Transient voltage suppressors
FDC6420C
MOSFETs
20V N & P Channel PowerTrench MOSFETs
SMCJ14CA-E3/57T
Diodes
Transient voltage suppressors
LM324MX
Amplifiers - Op Amps, Buffer, Instrumentation
Quad operational amplifier
FDS3590NL
MOSFETs
MOSFETs SO 8 N CH 80V
BUT11
Diodes
Npn silicon transistor
FDS8842NZ
N channel powertrenchâ
FDS6689SNL
FDS9400ANL
Electronic Components
DC 17+ , SOP8
FDS6675NL
Electronic Components
P, 30V, 11.6A,RDS(ON),11m��@10V,12m��@4.5V,20Vgs(��V), 2.5Vth(V):SOP8
BC859BMTF
Pnp epitaxial silicon transistor