Hynix Semiconductor
Южнокорейский производитель памяти DRAM и NAND Flash, основан в 1983 году как Hyundai Electronics. В 2001 году переименован в Hynix Semiconductor, в 2012 году вошёл в группу SK под именем SK hynix. Входит в тройку крупнейших мировых производителей памяти.
Найдено 4 484 компонентов
Партномер
Категория
Описание
HY29F040AP-90
512k x 8 bit cmos 5.0 volt only, sector erase flash memory
HY5V26C(L/S)F-P(I)
Sdram 128mb
HY5DU28422ET(P)-M
Ddr sdram 128mb
HY57V561620B(L/S)T-P
Sdram 256mb
HY5V62DF(P)-7
Sdram 64mb
GDC21D301A
Transport decoder
HY57V643220DT-5
Sdram 64mb
UPA101
12
HYMD132725BL8-H
Wraparound high value thin film
HYMD512G726(L)8-H
Ddr sdram registered dimm 1gb
HYMD525G726A(L)S4-H
Ddr sdram registered dimm 2gb
HYM71V16M635HCT6
Sdram so dimm 128mb
HY57V641620HGT-55I
4 banks x 1m x 16bit synchronous dram
HY57V651620BLTC-75
4 banks x 1m x 16bit synchronous dram
HY29LV320TT-70I
32 mbit (2m x 16) low voltage flash memory
HY5DW283222BF(P)-2
Gddr sdram 128mb
GMS81016
8 bit single chip microcomputers
HY5DU12422A(L)T-M
Ddr sdram 512mb
HY29F400BG70
4 megabit (512kx8/256kx16) 5 volt only flash memory
HY5DU56822DTP-J
Ddr sdram 256mb
HY57V64820HGTP-7
4 banks x 2m x 8bit synchronous dram
HY5DU56822BF-D4
Ddr sdram 512mb
GMS90C56
8 bit single chip microcontrollers
HY5S6B6D
Mobile sdr 64mb
HY5DU288DT-L
Ddr sdram 128mb
HY27SF081G2M-VCB
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY628400ALLG-E
512k x8 bit 5.0v low power cmos slow sram
HYMD264M726A8-H
Ddr sdram so dimm 512mb
HY62V8100BLLT1-E
Low power slow sram 1mb
HY62U8100BLLG-I
Low power slow sram 1mb
HYMD264726A(L)8-L
Ddr sdram unbuffered dimm 512mb
HYMD232G726(L)8M-H
Ddr sdram registered dimm 256mb
HYMD264G726B8-M
Ddr sdram registered dimm 512mb
HYMD512646A(L)8-M
Ddr sdram unbuffered dimm 1gb
HYMD132G725BL4-H
Wraparound high value thin film
HY62V8400LR2
Wraparound high value thin film
HY6264-15
8kx8 bit cmos sram
HY62SF16404D-SFI
Super low power slow sram 4mb
HY5Y6B6DLF-PF
Mobile sdr 64mb
HY29F040AR-55
512k x 8 bit cmos 5.0 volt only, sector erase flash memory
HY27UF161G2M-VCB
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY5DU56422D(L)F-J
Ddr sdram 256mb
HY5DU56422CF -M
Ddr sdram 256mb
HY57V64420HGT(P)-5
Sdram 64mb
HY57V28820HCLT-HI
Wraparound high value thin film
HY5DS283222BFP-33
RAM
128m(4mx32) gddr sdram
HY29LV160BT-90I
16 mbit (2m x 8/1m x 16) low voltage flash memory
HY5DU12422BF
Ddr sdram 512mb
GMS81C1408 D
8 bit single chip microcontrollers
HY5S6B6DLFP-SE
Mobile sdr 64mb
