Hynix Semiconductor

Южнокорейский производитель памяти DRAM и NAND Flash, основан в 1983 году как Hyundai Electronics. В 2001 году переименован в Hynix Semiconductor, в 2012 году вошёл в группу SK под именем SK hynix. Входит в тройку крупнейших мировых производителей памяти.

Страна: Южная КореяОснована: 1983

Найдено 4 485 компонентов
Партномер
Категория
Описание
HY5DU561622CT(P)-J
Ddr sdram 256mb
HY27SF161G2M-TCP
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY27SF081G2M-TPCS
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY57V56420C(L)T-6
Sdram 256mb
HY27LF081G2M-VCP
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY5DU283222AF
128m(4mx32) gddr sdram
HY5DU281622ET-28
128m(8mx16) gddr sdram
HY57V561620B
4banks x 4m x 16bit synchronous dram
HY29F040AC-70E
512k x 8 bit cmos 5.0 volt only, sector erase flash memory
GMS81C4040
8 bit single chip microcontrollers
HY27SF161G2M-VEB
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY57V281620ET
Sdram 128mb
HY51V18163HGJ
1m x 16bit edo dram
HY62U8100B-E
Low power slow sram 1mb
HY62V8400LP
Wraparound high value thin film
HYMD116645BL8-L
Wraparound high value thin film
HYMD232726D8J-D4
Ddr sdram unbuffered dimm 256mb
HYMD512646A8J
Ddr sdram unbuffered dimm 1gb
HY5PS12821F-E4
Ddr2 sdram 512mb
GM72V66841ET
2,097,152 word x 8 bit x 4 bank synchronous dynamic ram
HY57V641620HGT(P)-7(I)
Sdram 64mb
HY57V64820HGLTP-55
4 banks x 2m x 8bit synchronous dram
HY57V56820C(L)T-K
Sdram 256mb
HY5PS12821FP-Y5
Ddr2 sdram 512mb
HYM71V16M755HC(L)T6-8
Sdram so dimm 128mb
HYMD212G726AS4M-K
Ddr sdram registered dimm 1gb
HYMD212G726C(L)S4M-L
Ddr sdram registered dimm 1gb
HYMD2326468
Ddr sdram unbuffered dimm 256mb
HYMD232G726A8-L
Ddr sdram registered dimm 256mb
HYMD264646C(L)8-M
Ddr sdram unbuffered dimm 512mb
HYM71V32C755HCT4-8
Sdram registered dimm 256mb
HY62UF16804B-DFC
512kx16bit full cmos sram
HY62V8400
Wraparound high value thin film
HYMD212G726AS4M-H
Ddr sdram registered dimm 1gb
HYMD232646B8-K
Ddr sdram unbuffered dimm 256mb
HY5DU281622ETP-4
Ddr sdram 128mb
HY5DU283222AQ-4
Wraparound high value thin film
HY5DU12822CLTP
512mb ddr sdram
HY27UF161G2M-VIB
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY27SS561M
256mbit (32mx8bit / 16mx16bit) nand flash
HY5V52FP-H
Sdram 256mb
HY27LF081G2M-VPEB
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY57V28820HC(L)T-P(I)
Sdram 128mb
HY57V64820HGTP-5
4 banks x 2m x 8bit synchronous dram
HY27LF161G2M-VCB
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY29F800ABG-12
8 megabit (1mx8/512kx16), 5 volt only, flash memory
HY5DS113222FM
Gddr sdram 512mb
GM71C18163C-7
1,048,576 words x 16 bit cmos dynamic ram
HY5S6B6DLF-BE
Mobile sdr 64mb
HY5DU56822CF -L
Ddr sdram 256mb