Hynix Semiconductor
Южнокорейский производитель памяти DRAM и NAND Flash, основан в 1983 году как Hyundai Electronics. В 2001 году переименован в Hynix Semiconductor, в 2012 году вошёл в группу SK под именем SK hynix. Входит в тройку крупнейших мировых производителей памяти.
Найдено 4 485 компонентов
Партномер
Категория
Описание
HYMD2326468-K
Ddr sdram unbuffered dimm 256mb
HYMD264726B8J-D43
Ddr sdram unbuffered dimm 512mb
HYMD525G726ALS4-H
Wraparound high value thin film
HM6F5201
Wraparound high value thin film
HY27UF081G2M-VCP
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY29F040AT-55E
512k x 8 bit cmos 5.0 volt only, sector erase flash memory
HY29F040AT-70E
512k x 8 bit cmos 5.0 volt only, sector erase flash memory
HY57V281620E(L)T(P)-7
Sdram 128mb
HY57V56420B(L)T-H
Sdram 256mb
HY57V643220C(L)T(P)-S(I)
Sdram 64mb
HY5DS113222FM-36
Gddr sdram 512mb
HY5DU113222FM-4
Gddr sdram 512mb
HY5DU121622CFP
512mb ddr sdram
HY5DW283222BFP-4
Gddr sdram 128mb
HY5PS56421F-C4
Ddr2 sdram 256mb
HY5V52C(L)F(P)-8
Sdram 256mb
GM71C17400CLT-7
4,194,304 words x 4 bit cmos dynamic ram
HY27SF161G2M-VMP
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY27UF081G2M-VCB
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY27UF161G2M-VPCP
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY57V281620ETP-7
128mb synchronous dram based on 2m x 4bank x16 i/o
HY57V56420B(L)T-K
Sdram 256mb
HY57V641620HGT-6I
4 banks x 1m x 16bit synchronous dram
HY5DU12822A(L)T-M
Ddr sdram 512mb
HY5PS1G821M
Ddr2 sdram 1gb
HYMD212G726D(L)S4M-K
Ddr sdram registered dimm 1gb
HY62SF16404E-DF
Super low power slow sram 4mb
HYMD132G725E(L)4M-M
Ddr sdram registered dimm 256mb
HYMD232G726A8-H
Ddr sdram registered dimm 256mb
HYMD564M646A6-D43
Ddr sdram so dimm 512mb
HYMP264R72(L)8-Y6
Ddr2 sdram registered dimm 512mb
HYMP512R72L4-C5
Wraparound high value thin film
GMS81C1404ED
8 BIT SINGLE CHIP MICROCONTROLLERS
HM6C5332
Hm6c5332 1.2ghz/250mhz dual frequency synthesizer
HMS91C8032
Hynix semiconductor inc. 8 bit single chip microcontrollers
HY27SF161G2M-TES
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY27UAXXX
Wraparound high value thin film
HY29LV320BT-70I
32 mbit (2m x 16) low voltage flash memory
HY57V64420HGT(P)-H
Sdram 64mb
HY5DU121622BLTP
512mb ddr sdram
HY5DU283222F-4
Gddr sdram 128mb
HY5DU56822AT -M
Ddr sdram 256mb
HY5DW113222FM(P)-22
Gddr sdram 512mb
HYMD512G726(L)8-L
Ddr sdram registered dimm 1gb
HYMD2326468
Ddr sdram unbuffered dimm 256mb
HY62KT08081E-DTE
32kx8bit cmos sram
HY62WT08081E-DPI
Hy62wt08081e series 32kx8bit cmos sram
HYMD264G726A8M-L
Ddr sdram registered dimm 512mb
HYMD264G726C(L)4M-M
Ddr sdram registered dimm 512mb
HYMP564R72(L)8-E3
Ddr2 sdram registered dimm 512mb
