Hynix Semiconductor

Южнокорейский производитель памяти DRAM и NAND Flash, основан в 1983 году как Hyundai Electronics. В 2001 году переименован в Hynix Semiconductor, в 2012 году вошёл в группу SK под именем SK hynix. Входит в тройку крупнейших мировых производителей памяти.

Страна: Южная КореяОснована: 1983

Найдено 4 485 компонентов
Партномер
Категория
Описание
HYM71V16635HCT6
Sdram unbuffered dimm 128mb
HYMD232G726A8
Ddr sdram registered dimm 256mb
HYMD264646A8J-D43
Ddr sdram unbuffered dimm 512mb
HYMD264M646BF8-D43
Ddr sdram so dimm 512mb
HYMP512R72(L)8-C5
Ddr2 sdram registered dimm 1gb
GM71C17400CLT-5
4,194,304 words x 4 bit cmos dynamic ram
GMS81608T
Lg semicon 8 bit microcontrollers
GMS90C320Q40
Hynix semiconductor inc. 8 bit single chip microcontrollers
HY27SF081G2M-VPMP
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY27UF081G2M-TPCS
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY29F400ABG-70I
4 megabit (512kx8/256kx16) 5 volt only flash memory
HY29F400ATT-55I
4 megabit (512kx8/256kx16) 5 volt only flash memory
HY57V281620HCST-KI
Wraparound high value thin film
HY57V283220(L)T(P)-P
Sdram 128mb
HY5RS573225F-16
Gddr3 sdram 256mb
HYMP564S646
Ddr2 sdram so dimm 512mb
HYMP564S648
Ddr2 sdram so dimm 512mb
HYMD264M726A(L)8-K
Ddr sdram so dimm 512mb
HY57V283220T-6
Sdram 128mb
GMS34004T
4 bit single chip microcomputers
HY29F040AP-55E
512k x 8 bit cmos 5.0 volt only, sector erase flash memory
HY51V65163HG
4m x 16bit edo dram
HY57V283220T-P
Sdram 128mb
HY57V643220CT-P
4 banks x 512k x 32bit synchronous dram
HY5DU561622DTP-H
Ddr sdram 256mb
HY5DU56822ALT
Wraparound high value thin film
HY628100BLG-E
128k x8 bit 5.0v low power cmos slow sram
HYMD264G726A4M-H
Ddr sdram registered dimm 512mb
HYMD512646A(L)8J-43
Ddr sdram unbuffered dimm 1gb
HY62C256-15
32k x 8 bit cmos sram
HY62LF16406D-SFI
Super low power slow sram 4mb
HYMD132G725E4-H
Ddr sdram registered dimm 256mb
HYMD232646BL8-H
Wraparound high value thin film
HYMD232726CL8-K
Wraparound high value thin film
HYMD512G726A8
Ddr sdram registered dimm 1gb
GL6840A
Electronic two tone ringer
GMS8160XPL
Lg semicon 8 bit microcontrollers
HY27UF161G2M-TMS
1gbit (128mx8bit / 64mx16bit) nand flash memory
HY29F800ATR-70I
8 megabit (1mx8/512kx16), 5 volt only, flash memory
HY57V281620ET-6
128mb synchronous dram based on 2m x 4bank x16 i/o
HY57V64820HGLT-8
4 banks x 2m x 8bit synchronous dram
HY57V64820HGT(P)-6
Sdram 64mb
HY5DS113222FM(P)-28
Gddr sdram 512mb
HY5DU56822AT -K
Ddr sdram 256mb
HY5PS1G821(L)M-E3
Ddr2 sdram 1gb
HY51VS18163HG
1m x 16bit edo dram
HY57V281620HCT-SI
Sdram 128mb
HY5PS1G831F-Y5
Ddr2 sdram 1gb
HY62V8100BLLST-I
Low power slow sram 1mb
HYM71V16735HCLT8M-K
Sdram unbuffered dimm 128mb