IXYS Corporation
Американская компания, основанная в 1983 году. Специализировалась на силовых полупроводниках (MOSFET, IGBT, тиристоры), RF-силовых устройствах и аналоговых/цифровых ИС для промышленности и энергетики. В 2018 году приобретена компанией Littelfuse.
Найдено 8 106 компонентов
Партномер
Категория
Описание
FMD40-06KC5
Electronic Components
POWER FIELD EFFECT TRANSISTOR, 38A I(D), 600V, 0.07OHM, 1 ELEMENT, N CHANNEL, SILICON, METAL OXIDE SEMICONDUCTOR FET
VUB145-16NO1
Rectifier Diodes
three phase bridges with dynamic brake igbt
IXFK32N80P
Polarhv hiperfet power mosfet
DH60-16A
Fast recovery discrete diodes
CS401-21IO2
Microcontrollers
OEM/CM ONLY
IXGR120N60C2
IGBTs
NPT <100kHz
IXFH230N075T2
MOSFETs
N Channel 75 V 230 A 4.2 mO Flange Mount TrenchT2 Power Mosfet TO 247
CS35-10IO4
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DSEP2X31-03A
Hiperfredtm epitaxial diode with soft recovery
VIO50-12P1
Igbt modules
VBO40-16NO6
Bridge Rectifier Diodes
Phases = Single / Number of Diodes = 4 / Reverse Repetitive Voltage Max. (Vrrm) kV = 1.6 / Forward Voltage (Vf) V = 1…
IXTP50N20P
MOSFETs
55...175 °C Housing type: TO 220 Polarity: N Variants: Enhancement mode Power dissipation: 360 W
IXFH110N25T
Trenchhv power mosfet hiperfet
IXFR180N07
MOSFETs
MOSFET, N, ISOPLUS247; Transistor type:MOSFET; Current, Id cont:180A; Resistance, Rds on:0.006R; Case style:ISOPLUS 2…
IXFA7N80P
MOSFETs
Trans MOSFET N CH 800V 7A 3 Pin(2+Tab) TO 263
LCA120LES
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CPC1979J
Solid State Relays
Spst No (1 Form A)
VUO190-18NO7
three phase diode bridges
MDD250-04N1
—
IXFK26N120P
Polar power mosfet hiperfet
IXGH22N50BU1S
Hiperfast igbt with diode
IXXH50N60C3D1
Extreme light punch through igbt for 20 60 khz switching
IXGH17N100A
Low vce(sat) igbt, high speed igbt
IXFR12N100Q
hiperfet power mosfets
MCC310-12I01
—
98822-1035
Connectors
High voltage mosfet
IXGH35N120B
Igbt lightspeed series
IXFE48N50QD2
MOSFETs
hiperfet power mosfets
IXSA20N60B2D1
10A 80A# TO 220, TO 247,PLUS 247(HOLE less TO 247), ISOPLUS247, Surface mountable TO 263 (D2)and TO 268 (D3) packages…
MDO600-20N1
Diodes
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MWI50-12A7T
Igbt modules sixpack
MEO450-12DA
Rectifier Diodes
Diode Module, Single, 1.2Kv, 453A Rohs Compliant: Yes |Ixys Semiconductor MEO450 12DA
VUO155-16NO7
IGBTs
three phase diode bridges
MCC312-18I01
IGBTs
—
MDI75-12A3
Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2.7 / Collector Emitter Voltage (Vceo) kV = 1.2 / Configurat…
IXTY08N50D2
Depletion mode mosfet
MCD40-16IO6
Thyristor/diode module
MDD17216N2
—
IXGH45N120
low saturation voltage types single igbt
VHFD16-16IO1
single phase half control bridges / single phase, full control rectifier bridges
CPC1709J
Solid State Relays
Spst No (1 Form A)
MUBW1512A7
Electronic Components
IGBT Module NPT Three Phase Inverter with Brake 1200 V 35 A 180 W Chassis Mount E2
DSDI35-02A
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MCC250-12IO1
Thyristor and rectifiers modules
MCD312-16IO1B
Electronic Components
IGBT Modules
IXTH6N120
MOSFETs
Single N Channel 1200 V 700 mOhm 300 W Power Mosfet TO 247 AD
IXFH74N20P
MOSFETs
HiPerFET
IXSX40N60CD1
Igbt with diode
IXFP7N80P
MOSFETs
N Channel 800 V 1.44 Ohm Through Hole HiPerFET Power Mosfet TO 220
IXFB30N120P
MOSFETs
Mosfet, N Ch, 1.2Kv, 30A, Plus264 Rohs Compliant: Yes |Ixys Semiconductor IXFB30N120P