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Integrated Silicon Solution

ISSI (Integrated Silicon Solution, Inc.) — американская fabless-компания, специализирующаяся на высокопроизводительных микросхемах памяти: SRAM, DRAM, NOR/NAND Flash. Штаб-квартира в Милпитасе, Калифорния. Продукция ориентирована на автомобильную, промышленную и медицинскую электронику.

Страна: США

Найдено 6 984 компонентов

IS61VPS51218A-200B3

256k x 36, 512k x 18 9 mb synchronous pipelined, single cycle deselect static ram

IS61WV12816BLL-12BI

128k x 16 high speed cmos static ram

IS65WV25616ALL-70TA3

256k x 16 low voltage, ultra low power cmos static sram

Cmos single chip 8 bit microcontroller with 4 kbytes of flash

IS43TR16256AL15HBLITR

IS61VPS51218A-200B3I

256k x 36, 512k x 18 9 mb synchronous pipelined, single cycle deselect static ram

IS61WV102416BLL

1m x 16 high speed asynchronous cmos static ram with 3.3v supply

IS62LV1288LL-70H

128k x 8 low power and low vcc cmos static ram

IS62WV5128BLL-70T2

512k x 8 low voltage, ultra low power cmos static ram

IS62WV6416ALL-55BLI

64k x 16 low voltage, ultra low power cmos static ram

IS42S16800B-7TLI

16meg x 8, 8meg x16 128 mbit synchronous dram

IS24C128A-3GLA3

131,072 bit 2 wire serial cmos eeprom

IS41C16100C-50KLI-TR

1m x 16 (16 mbit) dynamic ram with edo page mode

512k bits x 32 bits x 4 banks (64 mbit) synchronous dynamic ram

128k x 8 high speed cmos static ram

128k x 8 high speed cmos static ram

IS61LV12816-10T

128k x 16 high speed cmos static ram with 3.3v supply

IS62C6416AL-35TI

64k x 16 high speed cmos static ram

Cmos single chip 8 bit microcontroller

IS41C16100-50KL

1m x 16 (16 mbit) dynamic ram with edo page mode

128k x 8 low power cmos static ram

32k x 8 low voltage cmos static ram

IS61LV51216-10T

512k x 16 high speed asynchronous

256k x 16 low voltage, ultra low power cmos static sram

1 kbyte eeprom with write protect function and programmable security code (psc)

IS28F400BVT-80T

262,144 x 16/524,288 x 8 smartvoltage boot block flash memory

IS42S16320B-6TL

64m x 8, 32m x 16 512mb synchronous dram

1 meg bits x 16 bits x 4 banks (64 mbit) synchronous dynamic ram

32k x 32 synchronous fast static ram

IS61NVF25636A-6.5B3

256k x 36 and 512k x 18 9mb, flow through (no wait) state bus sram

IS61NVP51218A-250B2

256k x 36 and 512k x 18 9mb, pipeline (no wait) state bus sram

IS64WV12816DBLL-12BLA3

128k x 16 high speed asynchronous cmos static ram

1,024 bit serial electrically erasable prom

2k bit/4k bit serial electrically erasable prom

IS45S83200D-6TLA1

32meg x 8, 16meg x16 256 mbit synchronous dram

IS61LF25618A-7.5B2

128k x 32, 128k x 36, 256k x 18 4 mb synchronous flow through static ram

IS61LF25636A-7.5B2

256k x 36, 512k x 18 9 mb synchronous flow through static ram

IS61LV10248-10TLI

1m x 8 high speed cmos static ram

IS61NLP12836A-200TQLI

Pipeline no wait state bus sram

IS62C256-45TI-TR

32k x 8 low power cmos static ram

32k x 8 low voltage static ram

IS63LV1024L-10T

128k x 8 high speed cmos static ram 3.3v revolutionary pinout

41LV16100B-50KL

1m x 16 (16 mbit) dynamic ram with edo page mode

IS61LV642412TQI

IS62WV25616BLL55TLIIC

1k bit spi serial electrically erasable prom

262,144 x 8 cmos flash memory

IS61LF102436A-6.5B3

36mb synchronous flow through static ram

IS61NVF25636A-7.5TQ

256k x 36 and 512k x 18 9mb, flow through (no wait) state bus sram

IS62VV25616LL-85TI

256k x 16 low voltage, 1.8v ultra low power cmos static ram

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