Leshan Radio Company
Крупнейший китайский производитель дискретных полупроводников: диодов, транзисторов и мостовых выпрямителей. Основана в 1970 году в Лэшане (провинция Сычуань). Долгие годы лидировала по объёму продаж дискретных полупроводников в Китае.
Найдено 2 674 компонентов
Партномер
Категория
Описание
R4000F
High voltage fast recovery diodes
BC807-16LT1G
BJTs
General purpose transistors(pnp silicon)
MMBT2907ALT1
BJTs
General purpose transistor(pnp silicon)
FR202
Electronic Components
SCHUTZSCHLAUCH, 7.62M, ROT, 20AWG
S25VB60
High current glass passivated single phase bridge rectifier
BC807-16LT1
BJTs
General purpose transistors(pnp silicon)
EFM104
1a fast recovery sma diodes
LBC846BPDW1TIG
Electronic Components
—
BCW68GLT1G
General purpose transistors(pnp silicon)
LBC80740LT1G
Microcontrollers
700mV PNP 300W 5V 100nA 50V 45V 500mA SOT 23 wire mounting，Bracket mounting，SMD mount 2.9mm*130cm*940μm
MC74VHC1GT02DTT1
2 input nor gate/cmos logic level shifter with lttl compatible inputs
LRB520S30T1G
Diodes
30V 1A 10μA 200mA Freestanding SOD 523 SMD mount 600μm(height)
BZX84C10LT1
Diodes
Semiconductor(technical data)
MUN5315DW1T1G
Dual bias resistor transistors
LSBC847BLT1G
Electronic Components
DC 18+ , SOT 23
MMBZ5264BLT1G
Crystals
Semiconductor
LBAT54SLT1G
Dual Serles Schottky Barrler Dlodes
MMBD6100LT1G
Monolithic dual switching diodes
LBZT52B5V1T1G
Electronic Components
Purchase Online. Ship Immediately.
LBZX84C18LT1G
Electronic Components
50nA 18V 45�� 300mW SOT 23 2.9mm*1.3mm
LRB521S30T1G
Electronic Components
Ask for Samsung & LG Lithium Ion Batteries Lead time Prices Only
LNTA7002NT1G
Electronic Components
Ask for Samsung & LG Lithium Ion Batteries Lead time Prices Only
LESD8D50CAT5G
Electronic Components
Purchase Online. Ship Immediately.
MUN5312DW1T1G
BJTs
Dual bias resistor transistors
LBZT52C3V9T1G
Diodes
DC 2020 , SOD123
MTZJ33C
Mtzj series zener diodes
BC847BWT1
BJTs
General purpose transistors(npn silicon)
LMUN2111LT1G
Bias resistor transistors
LBAV99LT1G
Diodes
70V 2A 6ns 70μA 215mA seriesconnected,centertap,2elements SOT 23 SMD mount 2.9mm*1.3mm*1mm
MTZJ39A
Mtzj series zener diodes
LBZX84C10LT1G
Diodes
200nA 10V 20�� 300mW SOT 23 2.9mm*1.3mm
DTB143EKT146
Digital transistors(built in resistors)
SLBAS21HT1G
Diodes
250V 9A 50ns 100nA 200mA SOD 323
BAS116LT1G
Switching diode
MUN5215DW1T1G
BJTs
Dual bias resistor transistors
LBZX84C5V1LT1G
Electronic Components
2��A SOT 23
BAW56LT1
Diodes
Monolithic dual switching diode common anode
2SC2412
General purpose transistors(npn silicon)
LBZX84C13LT1G
Electronic Components
—
MSD1328-ST1
Npn low voltage output amplifiers surface mount
BAW56WT1
Dual switching diodes
BAS20HT1
Diodes
High voltage switching diode
MSD602-RT1
BJTs
Npn general purpose amplifier transistor surface mount
MMBD2835LT1G
Diodes
Monolithic dual switching diodes
MMBT2907ALT1HTSA1
BJTs
General purpose transistor(pnp silicon)
BZX84C68LT1G
Semiconductor(technical data)
EFM106
1a fast recovery sma diodes
MMBTA92LT1
BJTs
High voltage transistor(pnp silicon)
MTZJ33B
Mtzj series zener diodes
MMBT5551LT1
High voltage transistors(npn silicon)