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Polyfet RF Devices

Американский производитель мощных РЧ-транзисторов и усилительных модулей на базе GaN, LDMOS и VDMOS технологий. Продукция применяется в военной связи, радиовещании, радарах и ЯМР-оборудовании. Штаб-квартира в Камарильо, Калифорния.

Страна: СШАОснована: 1984

Найдено 869 компонентов

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Silicon gate enhancement mode rf power ldmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metallized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metallized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Silicon gate enhancement mode rf power vdmos transistor

Silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Silicon gate enhancement mode rf power ldmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metallized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metallized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Wraparound chip resistor thick film industrial

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Silicon gate enhancement mode rf power ldmos transistor

Patented gold metallized silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

Silicon gate enhancement mode rf power ldmos transistor

Silicon gate enhancement mode rf power ldmos transistor

Silicon gate enhancement mode rf power vdmos transistor

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

F10022UGR020101201BAG

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor

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