Samsung Electronics — южнокорейский технологический гигант, основанный в 1969 году. Крупнейший в мире производитель полупроводников памяти (DRAM, NAND), а также дисплеев и бытовой техники. Штаб-квартира в Сувоне, Южная Корея.
Найдено 7 686 компонентов
Партномер
Категория
Описание
K4F661612C-L
4m x 16bit cmos dynamic ram with fast page mode
K4H1G0838D-TLA0
128mb ddr sdram
K4H561638D-TCB0
128mb ddr sdram
K4H560838E-ZLA2
Ddr sdram 256mb e die (x4, x8)
K4H510438B-UC/LB3
512mb b die ddr sdram specification
K7B163625A
512kx36 & 1mx18 synchronous sram
K7B803625B-PC75000
256kx36 & 512kx18 bit synchronous burst sram
K7M403625B K7M403225B K7M401825B
128kx36 & 128kx32 & 256kx18 bit flow through ntram™ data sheet
K8D1716UTB-YI08
16m dual bank nor flash memory
K9F5608U0B-DIB0
32m x 8 bit / 16m x 16 bit nand flash memory
K9K1G08Q0A
128m x 8 bit / 64m x 16 bit nand flash memory
KA2285
5 dot dual led level meter driver
KFG1G16U2M-DID
Flash memory
K6T1008V(U)2E FAMILY
128k x 8 bit low power and low voltage cmos static ram data sheet
K6T4008U1C-GB10
512kx8 bit low power and low voltage cmos static ram
K6X1008T2D-TQ70
128kx8 bit low power cmos static ram
K6X4016T3F
256kx16 bit low power and low voltage cmos static ram
K7A163600A-QI25
512kx36 & 1mx18 synchronous sram
K7D801871B-HC25
256kx36 & 512kx18 sram
K7N163601A-Q(F)C(I)13
512kx36 & 1mx18 pipelined ntram
K9F1G16U0M
128m x 8 bit / 64m x 16 bit nand flash memory
KA2659
Linear integrated circuit
KB2512
Deflection processor for multisync monitors
KM424C64-12
64k x 4 bit cmos video ram
KM62256CLRG-4L
32kx8 bit low power cmos static ram
KM681002CLJ-12
128kx8 bit high speed cmos static ram5v operating. operated at commercial and industrial temperature ranges.
KMM372C400CS
4m x 72 dram dimm with ecc using 4mx4, 4k 2k refresh, 5v
KMM372F3280BK3
32m x 72 dram dimm with ecc using 16mx4, 4k 8k refresh, 3.3v
KS5805A
Telephone pulse dialer with redial
M366F080(8)3DJ3-C MODE WITHOUT BUFFER
8m x 64 dram dimm using 8mx8, 8k & 4k refresh, 3.3v data sheet
M464S0924DTS-L7C
8mx64 sdram sodimm based on 8mx16, 4banks, 4k refresh, 3.3v synchronous drams with spd data sheet
MMBT6429
Npn (amplifier transistor)
PC1004-220M-RC
Pc100 sdram module preliminary
STD110 ASIC
Pll 2013x
K4S643233F-DE/P1L
2mx32 mobile sdram 90fbga cmos sdram
K4S643232C
512k x 32bit x 4 banks synchronous dram data sheet
K4S56163LF-L
4m x 16bit x 4 banks mobile sdram in 54boc
K4C89083AF-ACFB
288mb x18 network dram2 specification
K4R271669A-NB(M)CCG6
256k x 16/18 bit x 2*16 dependent banks direct rdramtm
K4H1G0438D-TLB0
128mb ddr sdram
K4H1G0438M-UC/LB3
1gb m die ddr sdram specification
K4H560838B-TCB0
128mb ddr sdram
K4H560438A-TLA0
128mb ddr sdram
K4H511638J-LCCC000
512mb c die ddr sdram specification
K4H510838D-TLA0
128mb ddr sdram
DS_K6F2008U2E
256kx8 bit super low power and low voltage full cmos static ram
K4S561633C-P75
16mx16 sdram 54csp
K4S561632E-NC(L)75
256mb e die sdram specification 54pin stsop ii
K5A3380YTC-T855
Mcp memory
K4H643238B-TCA2
128mb ddr sdram