Полупроводниковое подразделение немецкого концерна Siemens AG, производившее силовые ИС, чипы для телекоммуникаций и памяти. В 1999 году выделено в самостоятельную публичную компанию Infineon Technologies AG.

Страна: Германия

Найдено 22 913 компонентов
Партномер
Категория
Описание
PSB2132HV12
TH3J10Z
WIGIC766708
A89-1441-274
ST194E-6547
6SL32101KE118AF2
Motor Drives
6ES71971LA120XA0
LS3369FH
BCR116E-6327
B33063A5682H
BC178C
Pnp silicon transistors
Q67100-H3761
64 kbit 8192 x 8 bit serial cmos eeproms, i2c synchronous 2 wire bus
Q62702-F1240
Npn silicon rf transistors (suitable for common emitter rf, if amplifiers low collector base capacitance due to conta…
BSP125L6327
Sipmos small signal transistor (n channel enhancement mode)
Q62702-F1215
Gaas fet (n channel dual gate gaas mes fet)
BSP373-E6327
PMB2709
HYB514256A-70
B32560-J1154-K
Metallized polyester film capacitors (mkt) uncoated (silver caps)
PEF55602
BUZ307
Transistors
N CHANNEL ENHANCEMENT IGBT TO 218 Power Field Effect Transistor, 3A I(D), 800V, 3ohm, 1 Element, N Channel, Silicon,…
HD1105G
Seven segment display 10mm
BSTR60120
IGBTs
3NE1438-0
BSTH4480K
BUP400D
Igbt with antiparallel diode (low forward voltage drop high switching speed low tail current latch up free including…
B41010B7477T
PSB2168
Digital answering machine sam
SDA9189XA132
ST513A565K006N
PMB2900HV3.4
BSTR66186
BSP61E6327
SABC501G1ENAA
82000100025
B32511/.022/5/250
BF722E6327
BFS480 E6634 NPN 8V 0.01A SOT363
V23540M1626D523
TLE4265S
5 v low drop voltage regulator
SIOV-B40K320
MLH1056AABTR
LYE676-T2
Power topled hyper bright led
BSTL4960K
B322344710100
BSS64E6426
FZH255B
BSM35GB120DN2
Igbt power module (half bridge including fast free wheeling diodes doubled diode area)
S-8423LFS-X
LYT672-P
Super topled high current led