Характеристики
| Transistor Polarity | NPN |
| Collector Emitter Voltage V(br)ceo | 160V |
| Transition Frequency ft | 100MHz |
| Power Dissipation Pd | 625mW |
| DC Collector Current | 600mA |
| DC Current Gain hFE | 30hFE |
2N5551TAonsemiBJTs
| Transistor Polarity | NPN |
| Collector Emitter Voltage V(br)ceo | 160V |
| Transition Frequency ft | 100MHz |
| Power Dissipation Pd | 625mW |
| DC Collector Current | 600mA |
| DC Current Gain hFE | 30hFE |