2SC1815-Y
Toshiba
BJTs
TRANSISTOR, NPN, TO-92
Характеристики
| Transistor Polarity | NPN |
| Collector Emitter Voltage V(br)ceo | 50V |
| Power Dissipation Pd | 400mW |
| DC Collector Current | 150mA |
| DC Current Gain hFE | 120 |
| Transistor Case Style | TO-92 |
| No. of Pins | 3 |
| SVHC | No SVHC (20-Jun-2011) |
| Collector Emitter Voltage Vces | 250mV |
| Continuous Collector Current Ic Max | 150mA |
| Current Ic Continuous a Max | 150mA |
| Current Ic hFE | 2mA |
| Gain Bandwidth ft Min | 80MHz |
| Gain Bandwidth ft Typ | 80MHz |
| Hfe Min | 70 |
| No. of Transistors | 1 |
| Package / Case | TO-92 |
| Pin Configuration | a |
| Power Dissipation Pd | 400mW |
| Power Dissipation Ptot Max | 400mW |
| Termination Type | Through Hole |
| Voltage Vcbo | 60V |
2SC1815-YToshibaBJTs