Характеристики
| Transistor Type | General Purpose |
| Transistor Polarity | NPN |
| Collector-to-Emitter Breakdown Voltage | 18V |
| Current Ic Continuous a Max | 20mA |
| Voltage, Vce Sat Max | 500mV |
| Power Dissipation | 150mW |
| Min Hfe | 56 |
| RoHS Compliant | Yes |
2SC5661T2LPROHMBJTs
| Transistor Type | General Purpose |
| Transistor Polarity | NPN |
| Collector-to-Emitter Breakdown Voltage | 18V |
| Current Ic Continuous a Max | 20mA |
| Voltage, Vce Sat Max | 500mV |
| Power Dissipation | 150mW |
| Min Hfe | 56 |
| RoHS Compliant | Yes |