Характеристики
| Transistor Type | General Purpose |
| Transistor Polarity | NPN |
| Collector-to-Emitter Breakdown Voltage | 30V |
| Current Ic Continuous a Max | 1A |
| Voltage, Vce Sat Max | 350mV |
| Power Dissipation | 200mW |
| Min Hfe | 270 |
| RoHS Compliant | Yes |
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