Характеристики
| Transistor Polarity | Dual NPN |
| Collector-to-Emitter Breakdown Voltage | 45V |
| Typ Gain Bandwidth ft | 100MHz |
| Operating Temperature Range | -65°C to +150°C |
| Transistor Case Style | SOT-457 |
| SVHC | No SVHC (18-Jun-2010) |
| Case Style | SOT-457 |
| Max Current Ic Continuous a | 500mA |
| Max Voltage Vce Sat | 700mV |
| Min Hfe | 160 |
| Power Dissipation | 600mW |
| Termination Type | SMD |
| Transistor Type | General Purpose |
BC817DS,115NexperiaBJTs