Характеристики
| Transistor Polarity | PNP |
| Configuration | Dual |
| Continuous Collector Current (Ic) mA | 100 |
| Collector-Emitter Voltage (Vceo) V | 65 |
| DC Current Gain (hFE) | 150 |
| Collector-Base Voltage (Vcbo) V | 80 |
| Emitter-Base Voltage (Vebo) V | 5 |
| Operating Temperature Min. °C | -55 |
| Operating Temperature Max. °C | 150 |
| Transit Frequency MHz | 100 |
| Power Dissipation (Pd) mW | 380 |
| Package Type | SOT-363 |
| Pins | 6 |
| Mounting Type | SMD |
| MSL | Level-1 |
| Packaging | Tape & Reel |
| Collector Emitter Saturation Voltage Max. (Vce(sat)) mV | 650 |
| Base Emitter Saturation Voltage Max. (Vbe(sat)) mV | 900 |
| Reflow Temperature Max. °C | 260 |
BC856BDW1T1GonsemiBJTs