Характеристики
| Transistor Polarity | Dual NPN |
| Collector Emitter Voltage V(br)ceo | 8V |
| Transition Frequency ft | 9GHz |
| Power Dissipation Pd | 500mW |
| DC Collector Current | 18mA |
| DC Current Gain hFE | 60hFE |
BFM505,115NXP SemiconductorsRF BJT
| Transistor Polarity | Dual NPN |
| Collector Emitter Voltage V(br)ceo | 8V |
| Transition Frequency ft | 9GHz |
| Power Dissipation Pd | 500mW |
| DC Collector Current | 18mA |
| DC Current Gain hFE | 60hFE |