Характеристики
| Transistor Polarity | N Channel |
| Collector Emitter Voltage V(br)ceo | 4.5V |
| Transition Frequency Typ ft | 1.8GHz |
| Power Dissipation Pd | 250mW |
| DC Collector Current | 80mA |
| DC Current Gain hFE | 110 |
| Operating Temperature Range | -65°C to +150°C |
| RF Transistor Case | SOT-343 |
| No. of Pins | 3 |
| SVHC | No SVHC (20-Jun-2011) |
| Associated Gain Ga | 21.5dB |
| Continuous Collector Current Ic | 80mA |
| Continuous Collector Current Ic Max | 80mA |
| Current Ic Continuous a Max | 80mA |
| Current Ic hFE | 50mA |
| Gain Bandwidth ft Min | 1.8GHz |
| Gain Bandwidth ft Typ | 1.8GHz |
| Hfe Min | 50 |
| No. of Transistors | 1 |
| Noise Figure Typ | 0.9dB |
| Output @ Third Order Intercept Point IP3 | 24.5dB |
| Package / Case | SOT-343 |
| Power @ 1dB Gain Compression, P1dB | 11dB |
| Power Dissipation Ptot Max | 250mW |
| SMD Marking | ATs |
| Termination Type | SMD |
| Test Frequency | 1.8GHz |
| Transistor Case Style | SOT-343 |
| Voltage Vcbo | 14V |
BFP540H6327XTSA1InfineonRF BJT