Характеристики
| Transistor Polarity | NPN |
| Collector Emitter Voltage V(br)ceo | 10V |
| Transition Frequency ft | 8GHz |
| Power Dissipation Pd | 300mW |
| DC Collector Current | 50mA |
| DC Current Gain hFE | 60hFE |
BFQ67W,115NXP SemiconductorsRF BJT
| Transistor Polarity | NPN |
| Collector Emitter Voltage V(br)ceo | 10V |
| Transition Frequency ft | 8GHz |
| Power Dissipation Pd | 300mW |
| DC Collector Current | 50mA |
| DC Current Gain hFE | 60hFE |