Характеристики
| Transistor Type | RF Bipolar |
| Transistor Polarity | NPN |
| Collector-to-Emitter Breakdown Voltage | 15V |
| Continuous Collector Current Ic | 120mA |
| ft, Typ | 9GHz |
| Case Style | SOT-23 |
| Power Dissipation Pd | 500mW |
| Output @ Third Order Intercept Point IP3 | 34dB |
| Termination Type | SMD |
| Associated Gain Ga | 13dB |
| Noise | 1.9dB |
| Power at 1dB Gain Compression, P1dB | 21dBm |
| Test Frequency | 900MHz |
| Transistors, No. of | 1 |
| Current Ic Continuous a Max | 120mA |
| Current Ic Max | 120mA |
| Current Ic hFE | 40mA |
| Min Hfe | 100 |
| Power, Ptot | 0.5W |
| SMD Marking | BFR540 |
| Voltage, Vcbo | 20V |
BFR540NXP SemiconductorsBJTs