Характеристики
| Transistor Polarity | N Channel |
| Collector Emitter Voltage V(br)ceo | 15V |
| Transition Frequency Typ ft | 9GHz |
| Power Dissipation Pd | 500mW |
| DC Collector Current | 120mA |
| DC Current Gain Max (hfe) | 120 |
| RoHS Compliant | Yes |
BFS540,115NXP SemiconductorsBJTs