Характеристики
| Transistor Polarity | NPN |
| Collector-to-Emitter Breakdown Voltage | 45V |
| Typ Gain Bandwidth ft | 200MHz |
| Operating Temperature Range | -65°C to +150°C |
| Transistor Case Style | SOT-89 |
| SVHC | No SVHC (18-Jun-2010) |
| Case Style | SOT-89 |
| Max Current Ic Continuous a | 500mA |
| Max Voltage Vce Sat | 1.3V |
| Min Hfe | 2000 |
| Power Dissipation | 1.3W |
| Termination Type | SMD |
| Transistor Type | Darlington |
BST50,115NexperiaBJTs