Характеристики
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Surface Mount | YES |
| Maximum Power Dissipation (Abs) | 3 W |
| Maximum Pulsed Drain Current (IDM) | 153 A |
| Transistor Element Material | SILICON |
CSD17555Q5ATexas InstrumentsMOSFETs
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Surface Mount | YES |
| Maximum Power Dissipation (Abs) | 3 W |
| Maximum Pulsed Drain Current (IDM) | 153 A |
| Transistor Element Material | SILICON |