Характеристики
| Transistor Type | General Purpose |
| Transistor Polarity | NPN |
| Collector-to-Emitter Breakdown Voltage | 50V |
| Current Ic Continuous a Max | 500mA |
| Power Dissipation | 200mW |
| Min Hfe | 56 |
| ft, Typ | 200MHz |
| RoHS Compliant | Yes |
DTD123YKT146ROHMBJTs
| Transistor Type | General Purpose |
| Transistor Polarity | NPN |
| Collector-to-Emitter Breakdown Voltage | 50V |
| Current Ic Continuous a Max | 500mA |
| Power Dissipation | 200mW |
| Min Hfe | 56 |
| ft, Typ | 200MHz |
| RoHS Compliant | Yes |