Характеристики
| Transistor Type | General Purpose |
| Transistor Polarity | Dual NPN |
| Collector-to-Emitter Breakdown Voltage | 50V |
| Current Ic Continuous a Max | 100mA |
| Power Dissipation | 150mW |
| Min Hfe | 68 |
| ft, Typ | 250MHz |
| RoHS Compliant | Yes |
EMH2T2RROHMBJTs
| Transistor Type | General Purpose |
| Transistor Polarity | Dual NPN |
| Collector-to-Emitter Breakdown Voltage | 50V |
| Current Ic Continuous a Max | 100mA |
| Power Dissipation | 150mW |
| Min Hfe | 68 |
| ft, Typ | 250MHz |
| RoHS Compliant | Yes |