Характеристики
| Transistor Type | General Purpose |
| Transistor Polarity | Dual NPN |
| Collector-to-Emitter Breakdown Voltage | 50V |
| Current Ic Continuous a Max | 50mA |
| Max Voltage Vce Sat | 400mV |
| Power Dissipation | 150mW |
| RoHS Compliant | Yes |
EMX1T2RROHMBJTs
| Transistor Type | General Purpose |
| Transistor Polarity | Dual NPN |
| Collector-to-Emitter Breakdown Voltage | 50V |
| Current Ic Continuous a Max | 50mA |
| Max Voltage Vce Sat | 400mV |
| Power Dissipation | 150mW |
| RoHS Compliant | Yes |