Характеристики
| Module Configuration | Dual |
| Transistor Polarity | NPN |
| Collector Emitter Voltage V(br)ceo | 50V |
| Power Dissipation Pd | 150mW |
| DC Collector Current | 150mA |
| DC Current Gain hFE | 120 |
| Operating Temperature Range | -55°C to +150°C |
| Transistor Case Style | EMT |
| No. of Pins | 6 |
| SVHC | No SVHC (20-Jun-2011) |
| Collector Emitter Voltage Vces | 400mV |
| Current Ic Continuous a Max | 50mA |
| Gain Bandwidth ft Typ | 180MHz |
| Hfe Min | 120 |
| Package / Case | EMT6 |
| Power Dissipation Pd | 150mW |
| Termination Type | SMD |
| Transistor Type | General Purpose |
EMX2T2RROHMBJTs