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F10032UGRNF02010112NO1BAG
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F10032UGRNF02010112NO1BAG

Polyfet RF Devices
Electronic Components
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor
F10032UGRNF02010112NO1BAGPDF
F10032UGRNF02010112NO1BAGPolyfet RF DevicesElectronic Components