F1206B1R50FWTR
Polyfet RF Devices
Electronic Components
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor
Характеристики AI
| Technology | Gold metalized silicon gate |
| Mode | Enhancement mode |
| Type | RF power VD MOS transistor |
F1206B1R50FWTRPolyfet RF DevicesElectronic Components