F1206FA7000V024T
Polyfet RF Devices
RF MOSFET
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor
Характеристики AI
| Technology | Gold metalized silicon gate |
| Mode | Enhancement mode |
| Type | RF power VD MOS transistor |
F1206FA7000V024TPolyfet RF DevicesRF MOSFET