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F20044UGRNF080112N01BAGNN
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F20044UGRNF080112N01BAGNN

Polyfet RF Devices
Electronic Components
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor
F20044UGRNF080112N01BAGNNPDF
F20044UGRNF080112N01BAGNNPolyfet RF DevicesElectronic Components