F2211/2 YL016
Polyfet RF Devices
Wire Terminal Connectors
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor
Характеристики AI
| Technology | Gold metalized silicon gate |
| Mode | Enhancement mode |
| Type | RF power VD MOS transistor |
F2211/2 YL016Polyfet RF DevicesWire Terminal Connectors