F2213/4-RD026
Polyfet RF Devices
Wire Terminal Connectors
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor
Характеристики AI
| Technology | Gold metalized silicon gate |
| Mode | Enhancement mode |
| Type | RF power VD MOS transistor |
F2213/4-RD026Polyfet RF DevicesWire Terminal Connectors