Характеристики
| Transistor Polarity | N Channel |
| Continuous Drain Current Id | 3.9A |
| Drain Source Voltage Vds | 600V |
| On Resistance Rds(on) | 1ohm |
| Rds(on) Test Voltage Vgs | 10V |
| Threshold Voltage Vgs Typ | 5V |
| Power Dissipation Pd | 50W |
| Operating Temperature Range | -55°C to +150°C |
| Transistor Case Style | D-PAK |
| No. of Pins | 3 |
| SVHC | No SVHC (20-Jun-2011) |
| Alternate Case Style | TO-252 |
| Current Id Max | 3.9A |
| On State Resistance Max | 1.2ohm |
| Package / Case | DPAK |
| Power Dissipation Pd | 50W |
| Power Dissipation Pd | 50W |
| Pulse Current Idm | 11.7A |
| Termination Type | SMD |
| Voltage Vds Typ | 600V |
| Voltage Vgs Max | 30V |
| Voltage Vgs Rds on Measurement | 10V |
| Voltage Vgs th Max | 5V |
| Voltage Vgs th Min | 3V |
FCD4N60TMonsemiMOSFETs