Характеристики
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Continuous Drain Current (Id) A | 80 |
| Drain-Source Voltage (Vds) V | 100 |
| ON Resistance (Rds(on)) mOhm | 9 |
| Gate-Source Voltage V | 20 |
| Fall Time ns | 46 |
| Rise Time ns | 39 |
| Turn-OFF Delay Time ns | 96 |
| Turn-ON Delay Time ns | 30 |
| Operating Temperature Min. °C | -55 |
| Operating Temperature Max. °C | 175 |
| Package Type | TO-263 |
| Pins | 3 |
| Mounting Type | SMD |
| MSL | Level-1 |
| Packaging | Tape & Reel |
| Reflow Temperature Max. °C | 245 |
| Power Dissipation (Pd) W | 310 |
FDB3632onsemiMOSFETs