Характеристики
| Module Configuration | Dual |
| Transistor Polarity | N Channel |
| Continuous Drain Current Id | 2.5A |
| Drain Source Voltage Vds | 30V |
| On Resistance Rds(on) | 95mohm |
| Rds(on) Test Voltage Vgs | 10V |
| Threshold Voltage Vgs Typ | 1.8V |
| Power Dissipation Pd | 960mW |
| Transistor Case Style | SuperSOT |
| No. of Pins | 6 |
| SVHC | No SVHC (20-Jun-2011) |
| Current Id Max | 2.5A |
| Current Temperature | 25°C |
| Full Power Rating Temperature | 25°C |
| No. of Transistors | 2 |
| Package / Case | SuperSOT-6 |
| Power Dissipation Pd | 960mW |
| Power Dissipation Pd | 960mW |
| Pulse Current Idm | 10A |
| SMD Marking | FDC6561AN |
| Termination Type | SMD |
| Uni / Bi Directional Polarity | NN |
| Voltage Vds | 30V |
| Voltage Vds Typ | 30V |
| Voltage Vgs Max | 1.8V |
| Voltage Vgs Rds on Measurement | 10V |
| Voltage Vgs th Max | 3V |
FDC6561ANonsemiMOSFETs