Характеристики
| Transistor Polarity | N Channel |
| Continuous Drain Current Id | 61A |
| Drain Source Voltage Vds | 200V |
| On Resistance Rds(on) | 41mohm |
| Rds(on) Test Voltage Vgs | 10V |
| Threshold Voltage Vgs Typ | 5V |
| Operating Temperature Range | -55°C to +150°C |
| Transistor Case Style | TO-220 |
| No. of Pins | 3 |
| SVHC | No SVHC (20-Jun-2011) |
| Current Id Max | 61A |
| Package / Case | TO-220 |
| Power Dissipation Pd | 417W |
| Power Dissipation Pd | 417W |
| Pulse Current Idm | 244A |
| Repetitive Avalanche Energy Max | 41.7mJ |
| Termination Type | Through Hole |
| Voltage Vds Typ | 200V |
| Voltage Vgs Max | 5V |
| Voltage Vgs Rds on Measurement | 10V |
FDP61N20onsemiMOSFETs