Характеристики
| Transistor Type | Bipolar |
| Transistor Polarity | PNP |
| Collector Emitter Voltage, V(br)ceo | -40V |
| Continuous Collector Current, Ic | -100mA |
| Collector Emitter Saturation Voltage, Vce(sat) | -0.3V |
| Power Dissipation, Pd | 200mW |
| RoHS Compliant | Yes |
FJY4009RonsemiBJTs