Характеристики
| Collector-Emitter Voltage (VCEO) Max. V | 70 |
| Collector Current Max. mA | 50 |
| Power Dissipation (Pd) mW | 150 |
| Reverse Voltage (Vr) V | 6 |
| Package Type | DIP-4 |
| Collector-Emitter Saturation Voltage Max. mV | 200 |
| Emitter−Collector Voltage (VECO) Max. V | 6 |
| Forward Voltage (Vf) Max. V | 1.2 |
| Output Type | Phototransistor |
| Isolation Voltage kV | 5 |
| Forward Current (If) Max. mA | 50 |
| Current Transfer Ratio (CTR) Min. % | 50 |
| Operating Temperature Max. °C | 110 |
| Operating Temperature Min. °C | -55 |
| Current Transfer Ratio (CTR) Max. % | 600 |
| Channels | 1 |
FOD817onsemiOptocouplers