Характеристики
| Transistor Polarity | NPN |
| Collector-to-Emitter Breakdown Voltage | 100V |
| Typ Gain Bandwidth ft | 130MHz |
| Power Dissipation Pd | 3W |
| DC Collector Current | 6A |
| DC Current Gain hFE | 200 |
| Operating Temperature Range | -55°C to +150°C |
| Transistor Case Style | SOT-223 |
| Case Style | SOT-223 |
| Current Ic hFE | 2A |
| Full Power Rating Temperature | 25°C |
| Max Current Ic | 6A |
| Max Current Ic Continuous a | 6A |
| Max Power Dissipation Ptot | 3W |
| Max Voltage Vce Sat | 50mV |
| Min Hfe | 100 |
| No. of Transistors | 1 |
| Power Dissipation | 3W |
| Pulsed Current Icm | 10A |
| Reel Quantity | 1000 |
| SMD Marking | FZT853 |
| Tape Width | 12mm |
| Termination Type | SMD |
| Transistor Type | Bipolar |
| Voltage Vcbo | 200V |
FZT853TADiodes Inc.BJTs