Характеристики
| Transistor Polarity | NPN |
| Collector-to-Emitter Breakdown Voltage | 300V |
| Typ Gain Bandwidth ft | 80MHz |
| Power Dissipation Pd | 3W |
| DC Collector Current | 3.5A |
| DC Current Gain hFE | 200 |
| Operating Temperature Range | -55°C to +150°C |
| Transistor Case Style | SOT-223 |
| Case Style | SOT-223 |
| Current Ic Hfe NPN Device | 0.5A |
| Current Ic hFE | 1A |
| Full Power Rating Temperature | 25°C |
| Max Current Ic | 3.5A |
| Max Current Ic Continuous a | 3.5A |
| Max Power Dissipation Ptot | 3W |
| Max Voltage Vce Sat | 100mV |
| Min Hfe | 100 |
| No. of Transistors | 1 |
| Power Dissipation | 3W |
| Pulsed Current Icm | 5A |
| Reel Quantity | 1000 |
| SMD Marking | FZT857 |
| Tape Width | 12mm |
| Termination Type | SMD |
| Transistor Type | Bipolar |
| Voltage Vcbo | 350V |
FZT857TADiodes Inc.BJTs