
Характеристики
| Transistor Type | General Purpose |
| Transistor Polarity | NPN / PNP |
| Collector-to-Emitter Breakdown Voltage | 50V |
| Current Ic Continuous a Max | 10mA |
| Voltage, Vce Sat Max | 300mV |
| Power Dissipation | 300mW |
| RoHS Compliant | Yes |
PDFIMD10AT108ROHMBJTs

| Transistor Type | General Purpose |
| Transistor Polarity | NPN / PNP |
| Collector-to-Emitter Breakdown Voltage | 50V |
| Current Ic Continuous a Max | 10mA |
| Voltage, Vce Sat Max | 300mV |
| Power Dissipation | 300mW |
| RoHS Compliant | Yes |
PDF