Характеристики
| Transistor Type | General Purpose |
| Transistor Polarity | Dual NPN |
| Collector-to-Emitter Breakdown Voltage | 120V |
| Current Ic Continuous a Max | 10mA |
| Voltage, Vce Sat Max | 500mV |
| Power Dissipation | 300mW |
| RoHS Compliant | Yes |
IMX8T108ROHMBJTs
| Transistor Type | General Purpose |
| Transistor Polarity | Dual NPN |
| Collector-to-Emitter Breakdown Voltage | 120V |
| Current Ic Continuous a Max | 10mA |
| Voltage, Vce Sat Max | 500mV |
| Power Dissipation | 300mW |
| RoHS Compliant | Yes |