IRF3205S
MOSFETs
HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Характеристики AI
| Current | 75A |
| Voltage | 55V |
| Resistance | 0.008ohm |
| Channel Type | N-Channel |
| Package | TO-263AB |
| Material | Silicon |
| Technology | Metal-oxide Semiconductor FET |
IRF3205SInternational RectifierMOSFETs