Характеристики
| Transistor Type | MOSFET |
| Transistor Polarity | N |
| Voltage, Vds Typ | 500V |
| Current, Id Cont | 4.5A |
| Resistance, Rds On | 1.5ohm |
| Voltage, Vgs Rds on Measurement | 10V |
| Voltage, Vgs th Typ | 4V |
| Case Style | TO-3 |
| Termination Type | Through Hole |
| Avalanche Single Pulse Energy Eas | 1.1mJ |
| Current Iar | 4.5A |
| Current, Idm Pulse | 18A |
| Fixing Centres | 30mm |
| Lead Spacing | 11mm |
| No. of Pins | 2 |
| Power Dissipation | 75W |
| Power, Pd | 75W |
| Temperature, Current | 25°C |
| Temperature, Full Power Rating | 25°C |
| Temperature, Tj Max | 150°C |
| Temperature, Tj Min | -55°C |
| Transistors, No. of | 1 |
| Voltage, Vds Max | 500V |
| Voltage, Vgs th Max | 4V |
| Weight | 0.012kg |
IRF430International RectifierMOSFETs