Характеристики
| Module Configuration | Dual |
| Transistor Polarity | N Channel |
| Continuous Drain Current Id | 3A |
| Drain Source Voltage Vds | 50V |
| On Resistance Rds(on) | 130mohm |
| Rds(on) Test Voltage Vgs | 10V |
| Threshold Voltage Vgs Typ | 3V |
| Power Dissipation Pd | 2W |
| Transistor Case Style | SOIC |
| No. of Pins | 8 |
| SVHC | No SVHC (20-Jun-2011) |
| Current Id Max | 3A |
| Current Temperature | 25°C |
| External Depth | 5.2mm |
| External Length / Height | 1.75mm |
| External Width | 4.05mm |
| Full Power Rating Temperature | 25°C |
| Junction Temperature Tj Max | 150°C |
| Junction Temperature Tj Min | -55°C |
| No. of Transistors | 2 |
| Package / Case | SOIC |
| Power Dissipation Pd | 2W |
| Power Dissipation Pd | 2W |
| Pulse Current Idm | 10A |
| Row Pitch | 6.3mm |
| SMD Marking | F7103 |
| Termination Type | SMD |
| Voltage Vds | 50V |
| Voltage Vds Typ | 50V |
| Voltage Vgs Max | 3V |
| Voltage Vgs Rds on Measurement | 10V |
IRF7103PBFInfineonMOSFETs