Характеристики
| Transistor Type | MOSFET |
| Transistor Polarity | Dual N |
| Voltage, Vds Typ | 55V |
| Current, Id Cont | 4.7A |
| On State Resistance | 0.043ohm |
| Voltage, Vgs Rds on Measurement | 10V |
| Voltage, Vgs th Typ | 1V |
| Case Style | SOIC |
| Termination Type | SMD |
| Current, Id Cont N Channel 2 | 4.7A |
| Current, Id Cont P Channel | 3.4A |
| Current, Idm Pulse N Channel 2 | 38A |
| Current, Idm Pulse P Channel | 27A |
| Max On State Resistance N Channel | 0.05ohm |
| Max On State Resistance P Channel | 0.105ohm |
| Power Dissipation Pd | 2.0W |
| Voltage, Vds | 55V |
| Voltage, Vds Max | 55V |
IRF7343QPBFInfineonMOSFETs